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Low voltage to high voltage power MOSFET family

Renesas Electronics's Power MOSFET family spans breakdown ranges from 25V to 1500V Vdss, ideal for a variety of consumer, automotive and industrial applications. Their wide range of current rating up to 180A drain current Id, in combination with low on-resistance Rds(on) offer outstanding energy efficiency. Renesas high performance Power MOSFET packages HVSON, LFPAK, WPAK(5x6 mm), HWSON(3x3 mm) are supplemented by Dual WPAK and Dual WPAK adn Dual HWSON packages, allowing high power density in a small mounting area for the most cost effective solutions. We also have standard packages such as TO-220, TO-247, TO-3P and so on.

Feature product

The all new Super Junction MOSFET, SJ-MOSFET, in the 600V Vdss class is based on Renesas's own Deep Trench Technology.This tchnology offers small gate charge and gate-drain charge,Qg and Qgd, achieving low swiching lossed and high switch frequency, This all results in an outstanding Figure of Merit (FON)as a benchmark for low power lossed, both minimizing switching losses and static losses. This is the ideal choice for high speed switching and high current applications. Renesas Super Junction MOSFET technology will be continuously expanded to high voltage ranges.

SJ-MOSFET (VDSS: more than 600V)

Product lineup

MOSFETs for switching

Switchable for high-speed switching load switch

Low Voltage MOSFETs (VDSS: less than 150 V)

High Voltage MOSFETs (VDSS: more than 150 V)

SJ-MOSFET (VDSS: more than 600 V)

Power MOSFET for Automotive Applications

Built-in MOSFET integrated SiP

Integrated power devices including IC and 2 power MOSFETs in a package

MOSFETs for amplifier

Suitable for signal amplifying

MOSFETs for high-frequency amplifier

Suitable for high-frequency signal amplifying

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